Diamond/γ-alumina band offset determination by XPS
نویسندگان
چکیده
γ-Alumina is a promising candidate for fabricating the gate of diamond metal oxide semiconductor field effect transistor based on oxygen termination due to its high bandgap 6.7 eV and static dielectric constant 9. Besides these properties, having sufficient barrier holes mandatory avoid carriers leakage through gate. However, band offset diamond/alumina heterojunction can be affected by alumina crystallinity interface bonds, which depend multiple factors such as deposition annealing temperature or surface treatment prior deposition. In this work, atomic layer deposited (1 0 0) p-diamond studied using X-ray photoelectron spectroscopy (XPS). Transmission electron microscopy studies reveal that 35 nm thick present gamma phase. The valence between γ-alumina evaluated single sample with new methodology an ion etching XPS depth profile. obtained value 3.4 eV.
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ژورنال
عنوان ژورنال: Applied Surface Science
سال: 2021
ISSN: ['1873-5584', '0169-4332']
DOI: https://doi.org/10.1016/j.apsusc.2020.146301